堆叠二维材料可能会降低半导体设备的成本
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一个研究小组由北卡州立University has found that stacking materials that are only one atom thick can create semiconductor junctions that transfer charge efficiently, regardless of whether the crystalline structure of the materials is mismatched – lowering the manufacturing cost for a wide variety of semiconductor devices such as solar cells, lasers and LEDs.
“This work demonstrates that by stacking multiple two-dimensional (2-D) materials in random ways we can create semiconductor junctions that are as functional as those with perfect alignment” says Dr. Linyou Cao, senior author of a paper on the work and an assistant professor of materials science and engineering at NC State.
“这可能会使半导体设备的制造价格便宜。”
对于大多数半导体电子或光子设备的工作，它们需要具有一个结，这是两种半导体材料结合在一起的地方。例如，在太阳能电池，激光器和LED等光子设备中，连接是光子转换为电子的地方，反之亦然。
All semiconductor junctions rely on efficient charge transfer between materials, to ensure that current flows smoothly and that a minimum of energy is lost during the transfer. To do that in conventional semiconductor junctions, the crystalline structures of both materials need to match. However, that limits the materials that can be used, because you need to make sure the crystalline structures are compatible. And that limited number of material matches restricts the complexity and range of possible functions for semiconductor junctions.
“但是我们发现，是否使用原子上的二维材料，晶体结构无关紧要，” Cao说。“我们在该实验中使用了硫化钼和硫化硫化钼，但这是我们认为适用于任何2-D半导体材料的基本发现。这意味着您可以使用两种或多种半导体材料的任何组合，并且可以随机堆叠它们，但仍然可以在材料之间获得有效的充电转移。”
当前，创建半导体连接意味着材料之间的晶体结构完美匹配 - 这需要昂贵的设备，复杂的处理方法和用户专业知识。这种制造成本是太阳能电池，激光器和LED等半导体设备的主要原因。但是堆叠二维材料不需要晶体结构匹配。
曹说：“这就像彼此之间堆放纸一样简单 - 甚至纸的边缘都没有关系。”
纸，“同样有效的层间激子松弛，并改善了外延和非急诊MOS2/WS2异质结构的吸收,” was published as a “just-accepted” manuscript inNano Letters12月3日。
Lead authors of the paper are Yifei Yu, a Ph.D. student at NC State; Dr. Shi Hu, a former postdoctoral researcher at NC State; and Liqin Su, a Ph.D. student at the University of North Carolina at Charlotte. The paper was co-authored by Lujun Huang, Yi Liu, Zhenghe Jin, and Dr. Ki Wook Kim of NC State; Drs. Alexander Puretzky and David Geohegan of Oak Ridge National Laboratory; and Dr. Yong Zhang of UNC Charlotte. The research was funded by the U.S. Army Research Office under grant number W911NF-13-1-0201 and the National Science Foundation under grant number DMR-1352028.
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给编辑的注释：The study abstract follows.
“同样有效的层间激子松弛，并改善了外延和非剧本MOS2/WS2异质结构的吸收”
Authors：Yifei Yu，Shi Hu，Lujun Huang，Yi Liu，Zhenghe Jin，Ki Wook Kim和Linyou Cao，北卡罗来纳州立大学；北卡罗来纳大学夏洛特分校的Liqin Su和Yong Zhang；Alexander A. Puretzky和David B. Geohegan，橡树岭国家实验室
Published：12月3日，Nano Letters
doi: 10.1021/nl5038177
抽象的：半导体异质结构提供了一个强大的平台，以针对基本和应用兴趣设计激子的动力。但是，由于晶格不匹配引起的界面缺陷，常规半导体异质结构的功能通常受到跨界面的无效电荷转移的限制。在这里，我们证明MOS2/WS2异质结构由垂直方向堆叠的单层MOS2和WS2组成，无论堆叠的外观和方向如何，都可以实现同样有效的效率的层中层激体弛豫。在外延和非司法MOS2/WS2异质结构中，光致发光强度的两个数量级降低了两个数量级。两种异质结构也表现出类似的改进的吸收，超出了单层MOS2和WS2吸收的简单超级强制。我们的结果表明，2D异质结构对光子设备的开发具有显着影响，特别是那些要求有效的激子分离和强烈的光吸收，例如太阳能电池，光电探测器，调节剂和光催化剂。这还表明，具有随机取向的不同2D材料的简单堆叠是制造复杂功能2D异质结构的可行策略，该策略将显示出与具有完美外观的同学相似的光学功能。
